A RHEED AND XPS STUDY OF INXGA1-XAS ON GAAS GROWN BY CHEMICAL BEAM EPITAXY

被引：3

作者：

BENSAOULA, A

HANSEN, H

CHEN, HC

ZBOROWSKI, JT

JAMISON, KD

IGNATIEV, A

SHIH, HD

TAO, YK

机构：

[1] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204

[2] UNIV HOUSTON,TEXAS CTR SUPERCONDUCTIV,HOUSTON,TX 77204

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(90)90366-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Considerable progress was made in the last years in utilizing reflection high energy electron diffraction (RHEED) intensity oscillations for determination of the growth rate and the composition in molecular beam epitaxial (MBE) growth of GaAs, AlGaAs and InGaAs. In this paper we report data from RHEED, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) to show that while such practice is now routine in MBE, it may not be applicable in chemical beam epitaxy (CBE), at least not in the case of CBE growth of InxGa1-xAs on GaAs. © 1990.

引用

页码：227 / 229

页数：3

共 9 条

[1] SURFACE CHEMICAL-KINETICS DURING THE GROWTH OF GAAS BY CHEMICAL BEAM EPITAXY [J].