SELECTIVE RESONANT PHOTOIONIZATION PROCESSES NEAR THE SI 2P EDGE OF TETRAMETHYLSILANE

被引：62

作者：

MORIN, P ^{[1
]}

DESOUZA, GGB ^{[1
]}

NENNER, I ^{[1
]}

LABLANQUIE, P ^{[1
]}

机构：

[1] UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.56.131

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：131 / 134

页数：4

共 19 条

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