NANOMETER THIN-FILM NI-NIO-NI DIODES FOR 30 THZ RADIATION

被引:71
作者
WILKE, I [1 ]
OPPLIGER, Y [1 ]
HERRMANN, W [1 ]
KNEUBUHL, FK [1 ]
机构
[1] SWISS CTR ELECTR & MICROTECH, CSEM, CH-2007 NEUCHATEL, SWITZERLAND
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 04期
关键词
D O I
10.1007/BF00323606
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the development of antenna-coupled thin-film nanometer Ni-NiO-Ni diodes which are used to detect 10.6 mum CO2-laser radiation. The Ni-NiO-Ni diodes have a minimum contact area of 0.056 mum2. This is smaller than those of any previously fabricated thin-film Metal-metalOxide-Metal (MOM) diodes. By measuring the second derivative of the dc current-voltage characteristics I(V), we demonstrate that the nonlinearity of the dc I(V) characteristics of our Ni-NiO-Ni diodes is larger than that of the dc I(V) characteristics of thin-film MOM diodes fabricated before by other authors. It is comparable to the nonlinearity of the dc I(V) characteristics of point-contact MOM diodes. Furthermore, we show that the polarisation-dependent infrared response of the Ni-NiO-Ni diodes is due to antenna coupling and that the polarisation-independent response is mainly of thermal origin. Consequently, the heating of the Ni-NiO-Ni diodes is due to the absorption of the incident CO2-laser radiation in the SiO2, and dissipation of the laser-induced ac antenna currents in the antenna.
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页码:329 / 341
页数:13
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