TRANSITION FROM (110) TO (103)/(013) GROWTH IN Y1BA2CU3O7-X THIN-FILMS ON (110)SRTIO3 SUBSTRATES

被引:40
作者
POELDERS, S [1 ]
AUER, R [1 ]
LINKER, G [1 ]
SMITHEY, R [1 ]
SCHNEIDER, R [1 ]
机构
[1] FORSCHUNGSZENTRUM KARLSRUHE,TECH & UMWELT INST NUKL FESTKORPERPHYS,D-76021 KARLSRUHE,GERMANY
来源
PHYSICA C | 1995年 / 247卷 / 3-4期
关键词
D O I
10.1016/0921-4534(95)00213-8
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBaCuO thin films have been deposited by inverted cylindrical magnetron sputtering on the (110) plane of SrTiO3 substrates. The transition from (110) to (103)/(013) growth was studied as a function of the substrate temperature, T-s, by means of X-ray diffraction, electrical-transport measurements and atomic force microscopy. Only at low T-s=600-620 degrees C the films grow purely [110] oriented. At higher T-s admixtures of [103] and [013] growth orientation occur, which are dominant at T-s>720 degrees C, but even at T-s=820 degrees C a 10% amount of (110) growth can be detected. The normal and superconducting properties of the low-T-s (110) films are poor: the ab plane conductivity at room temperature is a factor of 10 lower than in single crystals and c-axis oriented thin films. T-c and j(c) do not exceed 70 K and 4 X 10(4) A/cm(2) at 4.2 K, respectively. The resistivity and j(c) anisotropies parallel and perpendicular to the ab plane reach 10 and 20, respectively. Due to the admixture of 40% [103] oriented grains the resistivity anisotropy decreases to 1. With respect to the [001] and [(1) over bar 10] substrate directions (103)/(013) dominated films are anisotropic as well but with the higher resistivity in [(1) over bar 10]. They reveal a resistivity anisotropy of 8. A drastic improvement of (110) growth and properties is provided by a PrBaCuO template layer, e.g. T-c increases to 89 K and the resistivity anisotropy amounts to 35.
引用
收藏
页码:309 / 318
页数:10
相关论文
共 23 条
[1]  
Batlogg B., 1990, HIGH TEMPERATURE SUP, P37
[2]   INFLUENCE OF THE DEPOSITION RATE ON THE RATIO OF A/C-AXIS ORIENTED GRAINS IN SPUTTERED YBACUO FILMS [J].
BURMANN, T ;
GEERK, J ;
MEYER, O ;
SCHNEIDER, R ;
LINKER, G .
SOLID STATE COMMUNICATIONS, 1994, 90 (09) :599-602
[3]   DIRECT OBSERVATION OF ELECTRONIC ANISOTROPY IN SINGLE-CRYSTAL Y1BA2CU3O7-X [J].
DINGER, TR ;
WORTHINGTON, TK ;
GALLAGHER, WJ ;
SANDSTROM, RL .
PHYSICAL REVIEW LETTERS, 1987, 58 (25) :2687-2690
[4]  
DIVIN YY, 1993, APPLIED SUPERCONDUCT, P437
[5]   LARGELY ANISOTROPIC SUPERCONDUCTING CRITICAL CURRENT IN EPITAXIALLY GROWN BA2YCU3O7-Y THIN-FILM [J].
ENOMOTO, Y ;
MURAKAMI, T ;
SUZUKI, M ;
MORIWAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1248-L1250
[6]   EPITAXIAL AND SMOOTH FILMS OF A-AXIS YBA2CU3O7 [J].
EOM, CB ;
MARSHALL, AF ;
LADERMAN, SS ;
JACOWITZ, RD ;
GEBALLE, TH .
SCIENCE, 1990, 249 (4976) :1549-1552
[7]   DIRECT MEASUREMENT OF THE ANISOTROPY OF THE RESISTIVITY IN THE A-B PLANE OF TWIN-FREE, SINGLE-CRYSTAL, SUPERCONDUCTING YBA2CU3O7-DELTA [J].
FRIEDMANN, TA ;
RABIN, MW ;
GIAPINTZAKIS, J ;
RICE, JP ;
GINSBERG, DM .
PHYSICAL REVIEW B, 1990, 42 (10) :6217-6221
[8]  
Geerk J., 1989, Material Science Reports, V4, P193, DOI 10.1016/S0920-2307(89)80003-9
[9]   CRYSTAL-GROWTH OF (110) YBA2CU3O7 AND (103) YBA2CU3O7 THIN-FILMS IN-SITU DEPOSITED BY LASER-ABLATION ON (110) SRTIO3 SINGLE-CRYSTAL SUBSTRATES [J].
GUILLOUXVIRY, M ;
THIVET, C ;
PERRIN, A ;
SERGENT, M ;
KARKUT, MG ;
ROSSEL, C ;
CATANA, A .
JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) :396-404
[10]   THE GROWTH OF (110) Y-BA-CU-O THIN-FILMS AND THEIR CHARACTERIZATION BY OPTICAL METHODS [J].
HABERMEIER, HU ;
LOURENCO, AACS ;
FRIEDL, B ;
KIRCHER, J ;
KOHLER, J .
SOLID STATE COMMUNICATIONS, 1991, 77 (09) :683-687