A COMPARISON OF RADIATION TOLERANCE OF FIELD EFFECT AND BIPOLAR TRANSISTORS

被引：8

作者：

GREGORY, BL

SMITS, FM

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1965.15490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：254 / &

共 11 条

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[2]

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[3]

BEAUFOY R, 1957, ATEJ, V13, P3

[4]

BILLINGTON DS, 1961, RADIATION DAMAGE ED, P332

[5]

CRAWFORD JH, 1957, PROGRESS SEMICONDUCT, V2, P820

[6] THE FIELD EFFECT TRANSISTOR [J].

DACEY, GC ;

ROSS, IM .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189

[7]

GIBSON AF, 1957, PROGRESS SEMICONDUCT, V2, P820

[8]

HOOD JA, 1963, 26163 SAND CORP TECH

[9] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[10] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376