ELECTRON-BEAM SOURCE MOLECULAR-BEAM EPITAXY OF III-COMPOUND V-COMPOUND

[1] ALAVI K, 1987, J VAC SCI TECHNOL B, V5, pR30

[2] BEAN J, IN PRESS J CRYST GRO

[3] COMPOSITIONALLY GRADED SEMICONDUCTORS AND THEIR DEVICE APPLICATIONS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1986, 16 : 263 - 291

[4] HARBISON JP, IN PRESS J CRYST GRO

[5] Malik R. P., UNPUB

[6] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665

[7] SAUER NJ, 1987, J VAC SCI TECHNOL B, V5, pR30

[8] SHIMIZU S, 1986, JPN J APPL PHYS, V24, P1130

[9] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236

[10] WEAVE JH, 1983, APPL PHYS A, V31, P1

[1] ALAVI K, 1987, J VAC SCI TECHNOL B, V5, pR30

[2] BEAN J, IN PRESS J CRYST GRO

[3] COMPOSITIONALLY GRADED SEMICONDUCTORS AND THEIR DEVICE APPLICATIONS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1986, 16 : 263 - 291

[4] HARBISON JP, IN PRESS J CRYST GRO

[5] Malik R. P., UNPUB

[6] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665

[7] SAUER NJ, 1987, J VAC SCI TECHNOL B, V5, pR30

[8] SHIMIZU S, 1986, JPN J APPL PHYS, V24, P1130

[9] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236

[10] WEAVE JH, 1983, APPL PHYS A, V31, P1