ABSENCE OF METALLICITY IN CS-GAAS(110) - A HUBBARD-MODEL STUDY

被引：12

作者：

GEDIK, Z ^{[1
]}

CIRACI, S ^{[1
]}

BATRA, IP ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.47.16391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV.

引用

页码：16391 / 16394

页数：4

共 28 条

[1] MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1 [J].