HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DISLOCATIONS IN COSI2 WITH THE C1 STRUCTURE

被引：23

作者：

SUZUKI, K

TAKEUCHI, S

机构：

[1] Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, 106, Roppongi

来源：

INTERMETALLICS | 1993年 / 1卷 / 01期

关键词：

COSI2; HIGH RESOLUTION ELECTRON MICROSCOPY; DISLOCATION; DISLOCATION DISSOCIATION; STACKING FAULT;

D O I：

10.1016/0966-9795(93)90017-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Weak-beam and high-resolution electron microscopy of dislocations in CoSi2 with the C1 structure, introduced at room temperature by pulverization, has shown that dislocations with the [100] Burgers vector and those with 1/2[110] are dissociated into partial dislocations by the following reactions: [100] 1/2[100] + 1/2[100] on {001} 1/2[110] 1/4[111] + 1/4[111BAR] on {110BAR} 1/2[110] 1/6[211] + 1/6[121BAR] on {111BAR} Stacking faults and micro-twins have also been observed by high resolution electron microscopy. Evidence that vacancies are mobile at room temperature has been obtained by observations of helical dislocations.

引用

页码：21 / 27

页数：7

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