COMPARISON OF 2 1/F NOISE MODELS IN MOSFETS

被引：18

作者：

PARK, HS ^{[1
]}

VANDERZIEL, A ^{[1
]}

LIU, ST ^{[1
]}

机构：

[1] HONEYWELL INC,CTR CORP RES,BLOOMINGTON,MN 55420

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 03期

关键词：

D O I：

10.1016/0038-1101(82)90110-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：213 / 217

页数：5

共 18 条

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[2] THEORY OF LOW FREQUENCY NOISE IN SI MOSTS [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :631-+

[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[4] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J].

FU, HS ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :273-+

[5] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J].

HOOGE, FN .

PHYSICA, 1972, 60 (01) :130-+

[6] 1-F NOISE [J].

HOOGE, FN .

PHYSICA B & C, 1976, 83 (01) :14-23

[7] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J].

HSU, ST .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1451-+

[8]

HSU ST, 1977, RCA REV, V38, P226

[9]

HSU ST, 1972, 1972 NOIS S GAIN

[10]

JINDAL RP, 1979, SOLID ST ELECTRON, V21, P901

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