MISMATCH STRAIN-MEASUREMENTS OF MBE GROWN CDTE

被引：23

作者：

MAGNEA, N

DALBO, F

FONTAINE, C

MILLION, A

GAILLARD, JP

DANG, LS

DAUBIGNE, YM

TATARENKO, S

机构：

[1] CEN,LETI,LIR,F-38041 GRENOBLE,FRANCE

[2] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN HERES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

MOLECULAR BEAM EPITAXY;

D O I：

10.1016/0022-0248(87)90441-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

X-ray diffraction and free exciton absorption and reflectivity have been used to measure the lattice mismatch induced strain of CdTe layers grown by MBE on (111) and (001) Cd//0//. //9//6Zn//0//. //0//4Te substrate. Below a critical thickness (l//c equals 0. 5 mu m) the CdTe is under a compressive biaxial strain equal to the lattice mismatch DELTA a/a equals 2. 2 multiplied by 10** minus **3. For layers of larger thickness the strain is partially relaxed by dislocations generation. The stress which is measured both by x-ray and the free exciton splitting is shown to vary as 1/l.

引用

页码：501 / 504

页数：4