STRUCTURE OF S-PASSIVATED INP(100)-(1X1) SURFACE

被引：65

作者：

LU, ZH

GRAHAM, MJ

FENG, XH

YANG, BX

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON N6A 3K7,ONTARIO,CANADA

[2] UNIV CHICAGO,CARS,CHICAGO,IL 60637

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray absorption near-edge structure (XANES) is used to determine the structure of the S-passivated InP(100)-(1 x 1) surface. From photon electric polarization-dependent XANES studies, we found that S forms a bridge bond with two In atoms along the [011] direction, with an In-S-In bond angle of 100-degrees. The atomic position of S is found to be close to the tetrahedral site of a phosphorous vacancy.

引用

页码：2773 / 2775

页数：3

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