THE SULFURIZED INP SURFACE

被引：66

作者：

WILMSEN, CW

GEIB, KM

SHIN, J

IYER, R

LILE, DL

POUCH, JJ

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：851 / 853

页数：3

共 22 条

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APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

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[6] PARTICIPATION OF D-ELECTRONS OF METALS OF GROUPS 1,2, AND 3 IN CHEMICAL BONDING WITH SULFUR [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (23) :1931-1933

[8] UTILIZATION OF THE IN-P-S CONDENSED PHASE-DIAGRAM TO ANALYZE COMPOSITION OF NATIVE SULFIDE FILMS ON INP [J].

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[9] STUDY OF THE CONDENSED PHASE-DIAGRAM OF THE IN-P-S SYSTEM [J].

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THIN SOLID FILMS, 1986, 139 (01) :53-59

[10] GROWTH OF SULFIDE FILMS ON INP BY PLASMA SULFIDATION [J].

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HOLLINGER, G .

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