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THERMAL SULFIDATION ON INP
被引:17
作者
:
DESCOUTS, B
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
DESCOUTS, B
[
1
]
DURAND, J
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
DURAND, J
[
1
]
COT, L
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
COT, L
[
1
]
POST, G
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
POST, G
[
1
]
SCAVENEC, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
SCAVENEC, A
[
1
]
机构
:
[1]
CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
来源
:
THIN SOLID FILMS
|
1985年
/ 131卷
/ 1-2期
关键词
:
D O I
:
10.1016/0040-6090(85)90383-9
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:139 / 148
页数:10
相关论文
共 15 条
[1]
BALDWIN BA, 1975, ASLE T, V19, P335
[2]
PLANAR SELF-ALIGNED ION-IMPLANTED INP MOSFET
CAMERON, DC
论文数:
0
引用数:
0
h-index:
0
CAMERON, DC
IRVING, LD
论文数:
0
引用数:
0
h-index:
0
IRVING, LD
WHITEHOUSE, CR
论文数:
0
引用数:
0
h-index:
0
WHITEHOUSE, CR
WOODWARD, J
论文数:
0
引用数:
0
h-index:
0
WOODWARD, J
[J].
ELECTRONICS LETTERS,
1982,
18
(12)
: 534
-
536
[3]
AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION
CLARK, DT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
CLARK, DT
FOK, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
FOK, T
ROBERTS, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
ROBERTS, GG
SYKES, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
SYKES, RW
[J].
THIN SOLID FILMS,
1980,
70
(02)
: 261
-
283
[4]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[5]
N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS
HENRY, L
论文数:
0
引用数:
0
h-index:
0
HENRY, L
LECROSNIER, D
论文数:
0
引用数:
0
h-index:
0
LECROSNIER, D
LHARIDON, H
论文数:
0
引用数:
0
h-index:
0
LHARIDON, H
PAUGAM, J
论文数:
0
引用数:
0
h-index:
0
PAUGAM, J
PELOUS, G
论文数:
0
引用数:
0
h-index:
0
PELOUS, G
RICHOU, F
论文数:
0
引用数:
0
h-index:
0
RICHOU, F
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
[J].
ELECTRONICS LETTERS,
1982,
18
(02)
: 102
-
103
[6]
ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR
HIRAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
HIRAYAMA, Y
PARK, HM
论文数:
0
引用数:
0
h-index:
0
PARK, HM
KOSHIGA, F
论文数:
0
引用数:
0
h-index:
0
KOSHIGA, F
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
SUGANO, T
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(08)
: 712
-
713
[7]
THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
HIROTA, Y
论文数:
0
引用数:
0
h-index:
0
HIROTA, Y
OKAMURA, M
论文数:
0
引用数:
0
h-index:
0
OKAMURA, M
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 536
-
540
[8]
KAWAKAMI T, 1979, ELECTRON LETT, V15, P503
[9]
EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
OKAMURA, M
论文数:
0
引用数:
0
h-index:
0
OKAMURA, M
YAMAGUCHI, E
论文数:
0
引用数:
0
h-index:
0
YAMAGUCHI, E
SHINODA, Y
论文数:
0
引用数:
0
h-index:
0
SHINODA, Y
HIROTA, Y
论文数:
0
引用数:
0
h-index:
0
HIROTA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(10)
: 6434
-
6436
[10]
ION-IMPLANTED N-CHANNEL INP.IGFET AND ITS LOW-FREQUENCY CHARACTERISTICS
OHMACHI, Y
论文数:
0
引用数:
0
h-index:
0
OHMACHI, Y
NISHIOKA, T
论文数:
0
引用数:
0
h-index:
0
NISHIOKA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: 1425
-
1426
←
1
2
→
共 15 条
[1]
BALDWIN BA, 1975, ASLE T, V19, P335
[2]
PLANAR SELF-ALIGNED ION-IMPLANTED INP MOSFET
CAMERON, DC
论文数:
0
引用数:
0
h-index:
0
CAMERON, DC
IRVING, LD
论文数:
0
引用数:
0
h-index:
0
IRVING, LD
WHITEHOUSE, CR
论文数:
0
引用数:
0
h-index:
0
WHITEHOUSE, CR
WOODWARD, J
论文数:
0
引用数:
0
h-index:
0
WOODWARD, J
[J].
ELECTRONICS LETTERS,
1982,
18
(12)
: 534
-
536
[3]
AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION
CLARK, DT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
CLARK, DT
FOK, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
FOK, T
ROBERTS, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
ROBERTS, GG
SYKES, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
UNIV DURHAM,DEPT APPL PHYS,DURHAM DH1 3HP,ENGLAND
SYKES, RW
[J].
THIN SOLID FILMS,
1980,
70
(02)
: 261
-
283
[4]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[5]
N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS
HENRY, L
论文数:
0
引用数:
0
h-index:
0
HENRY, L
LECROSNIER, D
论文数:
0
引用数:
0
h-index:
0
LECROSNIER, D
LHARIDON, H
论文数:
0
引用数:
0
h-index:
0
LHARIDON, H
PAUGAM, J
论文数:
0
引用数:
0
h-index:
0
PAUGAM, J
PELOUS, G
论文数:
0
引用数:
0
h-index:
0
PELOUS, G
RICHOU, F
论文数:
0
引用数:
0
h-index:
0
RICHOU, F
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
[J].
ELECTRONICS LETTERS,
1982,
18
(02)
: 102
-
103
[6]
ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR
HIRAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
HIRAYAMA, Y
PARK, HM
论文数:
0
引用数:
0
h-index:
0
PARK, HM
KOSHIGA, F
论文数:
0
引用数:
0
h-index:
0
KOSHIGA, F
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
SUGANO, T
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(08)
: 712
-
713
[7]
THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
HIROTA, Y
论文数:
0
引用数:
0
h-index:
0
HIROTA, Y
OKAMURA, M
论文数:
0
引用数:
0
h-index:
0
OKAMURA, M
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(01)
: 536
-
540
[8]
KAWAKAMI T, 1979, ELECTRON LETT, V15, P503
[9]
EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
OKAMURA, M
论文数:
0
引用数:
0
h-index:
0
OKAMURA, M
YAMAGUCHI, E
论文数:
0
引用数:
0
h-index:
0
YAMAGUCHI, E
SHINODA, Y
论文数:
0
引用数:
0
h-index:
0
SHINODA, Y
HIROTA, Y
论文数:
0
引用数:
0
h-index:
0
HIROTA, Y
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(10)
: 6434
-
6436
[10]
ION-IMPLANTED N-CHANNEL INP.IGFET AND ITS LOW-FREQUENCY CHARACTERISTICS
OHMACHI, Y
论文数:
0
引用数:
0
h-index:
0
OHMACHI, Y
NISHIOKA, T
论文数:
0
引用数:
0
h-index:
0
NISHIOKA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: 1425
-
1426
←
1
2
→