THERMAL SULFIDATION ON INP

被引：17

作者：

DESCOUTS, B ^{[1
]}

DURAND, J ^{[1
]}

COT, L ^{[1
]}

POST, G ^{[1
]}

SCAVENEC, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE

来源：

THIN SOLID FILMS | 1985年 / 131卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90383-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 148

页数：10

共 15 条

[1] BALDWIN BA, 1975, ASLE T, V19, P335
[2] PLANAR SELF-ALIGNED ION-IMPLANTED INP MOSFET
CAMERON, DC
IRVING, LD
WHITEHOUSE, CR
WOODWARD, J
[J]. ELECTRONICS LETTERS, 1982, 18 (12) : 534 - 536
[3] AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION
CLARK, DT
FOK, T
ROBERTS, GG
SYKES, RW
[J]. THIN SOLID FILMS, 1980, 70 (02) : 261 - 283
[4] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[5] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS
HENRY, L
LECROSNIER, D
LHARIDON, H
PAUGAM, J
PELOUS, G
RICHOU, F
SALVI, M
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 102 - 103
[6] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR
HIRAYAMA, Y
PARK, HM
KOSHIGA, F
SUGANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 712 - 713
[7] THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
HIROTA, Y
OKAMURA, M
KOBAYASHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 536 - 540
[8] KAWAKAMI T, 1979, ELECTRON LETT, V15, P503
[9] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
KOBAYASHI, T
OKAMURA, M
YAMAGUCHI, E
SHINODA, Y
HIROTA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6434 - 6436
[10] ION-IMPLANTED N-CHANNEL INP.IGFET AND ITS LOW-FREQUENCY CHARACTERISTICS
OHMACHI, Y
NISHIOKA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : 1425 - 1426

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