INVERSE AND DIRECT PHOTOEMISSION EXPERIMENTS (UV RANGE) OF THE SI/NI INTERFACES

被引：7

作者：

AZIZAN, M

BAPTIST, R

CHAUVET, G

TAN, TAN

机构：

[1] CEN,ELECTR & TECHNOL INFORMAT LAB,IRDI,COMMISSARIAT ENERGIE ATOM,F-38041 GRENOBLE,FRANCE

[2] CEN,DEPT RECH FONDAMENTALE,SERV PHYS,PSC,COMMISSARIAT ENERGIE ATOM,F-38041 GRENOBLE,FRANCE

[3] CNRS,ETUDES PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90854-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：234 / 239

页数：6

共 12 条

[1]

AZIZAN M, UNPUB SOLID STATE CO

[2]

BAPTIST R, UNPUB SCANNING ELECT

[3]

CHAUVET G, UNPUB J ELECTRON SPE

[4] ELECTRONIC-STRUCTURE OF NICKEL SILICIDES NI2SI, NISI, AND NISI2 [J].

FRANCIOSI, A ;

WEAVER, JH ;

SCHMIDT, FA .

PHYSICAL REVIEW B, 1982, 26 (02) :546-553

[5] CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627

[6]

HARRISON WA, 1980, ELECTRONIC STRUCTURE, P498

[7] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J].

JACKSON, WB ;

KELSO, SM ;

TSAI, CC ;

ALLEN, JW ;

OH, SJ .

PHYSICAL REVIEW B, 1985, 31 (08) :5187-5198

[8] DIRECTIONAL UV PHOTOEMISSION FROM CLEAN AND SULFUR SATURATED (100), (110) AND (111) NICKEL SURFACES [J].

NGUYEN, TTA ;

CINTI, RC .

SURFACE SCIENCE, 1977, 68 (01) :566-575

[9] BAND EDGES, FERMI LEVEL POSITION, AND HYDROGEN CONCENTRATION IN SURFACE NEAR REGIONS OF A-SI-H [J].

REICHARDT, J ;

LEY, L ;

JOHNSON, RL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :329-332

[10] INTERFACES FORMED BY EVAPORATION OF SI ON NI AND MO SURFACES [J].

TAN, TAN ;

AZIZAN, M ;

CINTI, RC ;

CHAUVET, G ;

BAPTIST, R .

SURFACE SCIENCE, 1985, 162 (1-3) :651-656

← 1 2 →