ELECTRICAL-PROPERTIES OF LOW-COMPENSATION GAAS

被引：10

作者：

LOOK, DC ^{[1
]}

COLTER, PC ^{[1
]}

机构：

[1] UNIVERSAL ENERGY SYST,DAYTON,OH 45432

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.28.1151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1151 / 1153

页数：3

共 12 条

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[3]

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[7] LOW-TEMPERATURE ELECTRON-TRANSPORT IN GAAS [J].

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[9] AN EXPLANATION FOR THE ANOMALOUS IMPURITY CONCENTRATIONS IN SI AS MEASURED BY THE HALL-EFFECT [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :855-858

[10] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].

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