STATISTICS OF MULTICHARGE CENTERS IN SEMICONDUCTORS - APPLICATIONS

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[3] Blakemore J. S., 1980, Semi-Insulating III-V Materials, P29

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5] Brooks H., 1955, Adv. Electron. Electron. Phys., V7, P85, DOI DOI 10.1016/S0065-2539(08)60957-9

[6] BUBE RH, 1974, ELECTRONIC PROPERTIE, P329

[7] BUBE RH, 1974, ELECTRONIC PROPERTIE, P98

[8] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12): : 1335 - 1339

[9] CALCULATION OF CARRIER EQUILIBRIUM EFFECTS IN TRANSITION-METAL DOPED SEMICONDUCTORS WITH APPLICATION TO CR-DOPED GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (12): : 2311 - 2323

[10] COURANT R, 1936, DIFFERENTIAL INTEGRA, V2, P190

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[3] Blakemore J. S., 1980, Semi-Insulating III-V Materials, P29

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5] Brooks H., 1955, Adv. Electron. Electron. Phys., V7, P85, DOI DOI 10.1016/S0065-2539(08)60957-9

[6] BUBE RH, 1974, ELECTRONIC PROPERTIE, P329

[7] BUBE RH, 1974, ELECTRONIC PROPERTIE, P98

[8] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12): : 1335 - 1339

[9] CALCULATION OF CARRIER EQUILIBRIUM EFFECTS IN TRANSITION-METAL DOPED SEMICONDUCTORS WITH APPLICATION TO CR-DOPED GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (12): : 2311 - 2323

[10] COURANT R, 1936, DIFFERENTIAL INTEGRA, V2, P190