STATISTICS OF MULTICHARGE CENTERS IN SEMICONDUCTORS - APPLICATIONS

[11] ELECTRON SPIN IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1953, 66 (397): : 121 - 122

[12] HOFFMANN HJ, 1980, PHYS REV LETT, V45, P1733, DOI 10.1103/PhysRevLett.45.1733

[13] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[14] A NOTE ON THE THEORY OF SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (392): : 604 - 608

[15] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059

[16] PUTLEY EH, 1960, HALL EFFECT SEMICOND, P109

[17] DEGENERACY FACTOR OF GOLD ACCEPTOR LEVEL IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 672 - 675

[18] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[19] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[20] NOTE ON SEMICONDUCTOR STATISTICS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 71 - 75

[11] ELECTRON SPIN IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1953, 66 (397): : 121 - 122

[12] HOFFMANN HJ, 1980, PHYS REV LETT, V45, P1733, DOI 10.1103/PhysRevLett.45.1733

[13] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[14] A NOTE ON THE THEORY OF SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (392): : 604 - 608

[15] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1056 - 1059

[16] PUTLEY EH, 1960, HALL EFFECT SEMICOND, P109

[17] DEGENERACY FACTOR OF GOLD ACCEPTOR LEVEL IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 672 - 675

[18] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[19] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[20] NOTE ON SEMICONDUCTOR STATISTICS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 71 - 75