DEGENERACY FACTOR OF GOLD ACCEPTOR LEVEL IN SILICON

[1] BROTHERTON SD, 1977, J APPL PHYS, V48, pR40

[2] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[3] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 25 (07) : 413 - 415

[4] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[5] Griffiths J., 1964, THEORY TRANSITION ME

[6] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559

[7] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505

[8] 2-ELECTRON IMPURITY STATES IN GAP - O [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462

[9] KAMIMURA K, 1960, J PHYS SOC JAPAN, V15, P1264

[10] Lever A.B.P., 1968, INORGANIC ELECTRON S

[1] BROTHERTON SD, 1977, J APPL PHYS, V48, pR40

[2] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[3] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 25 (07) : 413 - 415

[4] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[5] Griffiths J., 1964, THEORY TRANSITION ME

[6] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559

[7] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505

[8] 2-ELECTRON IMPURITY STATES IN GAP - O [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462

[9] KAMIMURA K, 1960, J PHYS SOC JAPAN, V15, P1264

[10] Lever A.B.P., 1968, INORGANIC ELECTRON S