CALCULATION OF CARRIER EQUILIBRIUM EFFECTS IN TRANSITION-METAL DOPED SEMICONDUCTORS WITH APPLICATION TO CR-DOPED GAAS

被引:8
作者
CLARK, MG
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 12期
关键词
D O I
10.1088/0022-3719/13/12/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:2311 / 2323
页数:13
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