CALCULATION OF CARRIER EQUILIBRIUM EFFECTS IN TRANSITION-METAL DOPED SEMICONDUCTORS WITH APPLICATION TO CR-DOPED GAAS

被引：8

作者：

CLARK, MG

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 12期

关键词：

D O I：

10.1088/0022-3719/13/12/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2311 / 2323

页数：13

共 36 条

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[5] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09): : 1857 - 1863
[6] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR
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[10] Goldberg P., 1966, LUMINESCENCE INORGAN, Vfirst