USE OF SPATIALLY DEPENDENT ELECTRON-CAPTURE TO PROFILE DEEP-LEVEL DENSITIES IN SCHOTTKY BARRIERS

被引:6
作者
GOMBIA, E [1 ]
GHEZZI, C [1 ]
MOSCA, R [1 ]
机构
[1] UNIV PARMA, DEPARTIMENTO FIS, I-43100 PARMA, ITALY
关键词
D O I
10.1063/1.336096
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1285 / 1291
页数:7
相关论文
共 9 条
[1]  
BOURGOIN J, 1983, SPRINGER SERIES SOLI, V35, pCH6
[2]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[3]   DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].
LEFEVRE, H ;
SCHULZ, M .
APPLIED PHYSICS, 1977, 12 (01) :45-53
[4]   THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES [J].
LI, GP ;
WANG, KL .
SOLID-STATE ELECTRONICS, 1983, 26 (09) :825-833
[5]   A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER [J].
LI, GP ;
WANG, KL .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :838-840
[6]   DYNAMICS OF CAPTURE FROM FREE-CARRIER TAILS IN DEPLETION REGIONS AND ITS CONSEQUENCES IN JUNCTION EXPERIMENTS [J].
MEIJER, E ;
GRIMMEISS, HG ;
LEDEBO, LA .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4266-4274
[8]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842