THE USE OF SPATIALLY-DEPENDENT CARRIER CAPTURE RATES FOR DEEP-LEVEL-DEFECT TRANSIENT STUDIES

被引：14

作者：

LI, GP

WANG, KL

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 09期

关键词：

D O I：

10.1016/0038-1101(83)90052-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：825 / 833

页数：9

相关论文

共 8 条

[1] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS [J].

GRIMMEISS, HG ;

LEDEBO, LA ;

MEIJER, E .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :307-308

[2] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J].

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1839-1845

[3] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

KUKIMOTO, H ;

HENRY, CH ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2486-2499

[4] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[5]

LI GP, 1983, UNPUB APPL PHYS LETT

[6]

Makram-Ebeid S., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P495

[7] EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP [J].

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :464-466

[8] ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS [J].

VINCENT, G ;

CHANTRE, A ;

BOIS, D .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5484-5487