ELECTRIC-FIELD EFFECT ON THE THERMAL EMISSION OF TRAPS IN SEMICONDUCTOR JUNCTIONS

被引：491

作者：

VINCENT, G

CHANTRE, A

BOIS, D

机构：

[1] Laboratoire de Physique de la Matiere, Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cédex, 20, Avenue Albert Einstein

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric field effects on the thermal emission of traps in a diode have been studied. Calculations were performed and compared with experimental data on deep centers in GaAs. The results are consistent with a thermal equivalent of the optical Franz-Keldysh effect.

引用

页码：5484 / 5487

页数：4

共 16 条

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