TIME-RESOLVED OBSERVATION OF GROWTH-PROCESSES ON SI-SURFACES WITH STM

被引：4

作者：

KOHLER, U

机构：

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1994年 / 5卷 / 4-6期

关键词：

D O I：

10.1051/mmm:0199400504-6024700

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Time resolved, high temperature STM has been used to study basic steps in homoepitaxial growth of silicon on Si(111) using disilane as precursor gas. Island nucleation, island growth, step dow and island coarsening after the flux has stopped can directly be imaged on an atomic scale. The shape of island during growth and in thermodynamic equilibrium can be determined. On the Si(111)-surface growth and decay processes are often found to proceed in portions of the surface reconstruction unit cells.

引用

页码：247 / 256

页数：10

共 8 条

[1] INSITU OBSERVATION OF WATER-ADSORPTION ON SI(100) WITH SCANNING TUNNELING MICROSCOPY [J].