LOW 1/F NOISE DESIGN OF HI-CMOS DEVICES

被引：11

作者：

AOKI, M

SAKAI, Y

MASUHARA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：296 / 299

页数：4

共 14 条

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[6] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J].

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SAH, CT .

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[7]

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[9]

Katto H, 1975, J JPN SOC APPL PHY S, V44, P243

[10]

LIU ST, 1980, 2ND P INT S 1F NOIS

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