SINGLE-ELECTRON QUANTIZATION OF ELECTRIC-FIELD DOMAINS IN SLIM SEMICONDUCTOR SUPERLATTICES

被引：21

作者：

KOROTKOV, AN ^{[1
]}

AVERIN, DV ^{[1
]}

LIKHAREV, KK ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that dc I-V curves of the semiconductor superlattices of small (practically, submicron) cross section should exhibit oscillations with the dc voltage period e/C, where C is the capacitance between adjacent conducting layers. These oscillations are due to the single-electron quantization of electric charge of the boundaries of static high-electric-field domains.

引用

页码：3282 / 3284

页数：3

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