ELECTRIC-FIELD DOMAINS IN SEMICONDUCTOR SUPERLATTICES - A NOVEL SYSTEM FOR TUNNELING BETWEEN 2D SYSTEMS

被引：165

作者：

GRAHN, HT

HAUG, RJ

MULLER, W

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.67.1618

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.

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页码：1618 / 1621

页数：4

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