ELECTROLUMINESCENCE AND HIGH-FIELD DOMAINS IN GAAS/ALGAAS SUPERLATTICES

被引:19
作者
HELM, M
GOLUB, JE
COLAS, E
机构
[1] Bellcore, Red Bank
关键词
D O I
10.1063/1.102513
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence, electroluminescence, and current measurements are used to probe the internal field in an n+-n-n+ GaAs/AlGaAs superlattice. At low bias voltages, the photoluminescence spectrum shows several peaks arising from electric field domains in the superlattice. Their positions correlate with features in the current-voltage characteristic and are consistent with a simple calculation of the Stark shift. Above the threshold voltage for impact ionization we observe spectrally narrow electroluminescence (width 3.5 meV). The energy of this emission coincides with the zero-field photoluminescence signal, indicating that electrons and holes screen the applied electric field in the quantum wells.
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页码:1356 / 1358
页数:3
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