EFFICIENT LIGHT-EMISSION BY IMPACT IONIZATION IN SINGLE-BARRIER TUNNELING DEVICES

被引：10

作者：

SNOW, ES

KIRCHOEFER, SW

CAMPBELL, PM

GLEMBOCKI, OJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 21期

关键词：

D O I：

10.1063/1.101147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2124 / 2126

页数：3

共 8 条

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[8] BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM-ARSENIDE [J].

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