BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM-ARSENIDE

被引：13

作者：

TANG, JY

SHICHIJO, H

HESS, K

IAFRATE, GJ

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期

关键词：

D O I：

10.1051/jphyscol:1981707

中图分类号：

学科分类号：

摘要：

引用

页码：63 / 69

页数：7

共 21 条

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