SURFACE IMAGING WITH LEEM

被引:49
作者
TELIEPS, W
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 01期
关键词
D O I
10.1007/BF00617891
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:55 / 61
页数:7
相关论文
共 16 条
[1]   BIATOMIC STEPS ON (001) SILICON SURFACES [J].
ASPNES, DE ;
IHM, J .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3054-3057
[2]  
BARTZ G, 1958, 4 P INT K EL BERL, V1, P201
[3]   THE RESOLUTION OF THE LOW-ENERGY ELECTRON REFLECTION MICROSCOPE [J].
BAUER, E .
ULTRAMICROSCOPY, 1985, 17 (01) :51-56
[4]  
BAUER E, 1962, ELECTRON MICROS, V1, pD11
[5]  
ESTRUP PJ, 1984, SPRINGER SER CHEM PH, V35, P205
[6]   STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J].
HENZLER, M ;
CLABES, J .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, :389-396
[7]   EXPERIMENT AND THEORY OF THE ELASTIC ELECTRON REFLECTION COEFFICIENT FROM TUNGSTEN [J].
HERLT, HJ ;
FEDER, R ;
MEISTER, G ;
BAUER, EG .
SOLID STATE COMMUNICATIONS, 1981, 38 (10) :973-976
[8]  
KROMER H, 1986 P SPRING M MAT
[9]  
MULLER K, 1986, BER BUNSEN PHYS CHEM, V90, P184
[10]   REFLECTION ELECTRON-MICROSCOPY OF CLEAN AND GOLD DEPOSITED (111) SILICON SURFACES [J].
OSAKABE, N ;
TANISHIRO, Y ;
YAGI, K ;
HONJO, G .
SURFACE SCIENCE, 1980, 97 (2-3) :393-408