MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR INTERFACES AND QUANTUM WELLS FOR ADVANCED OPTOELECTRONIC DEVICES

被引：7

作者：

PLOOG, K

机构：

[1] Max-Planck-Inst fuer, Festkoerperforschung, Germany

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 12卷 / 1-12期

关键词：

Molecular Beam Epitaxy - Semiconducting Aluminum Compounds--Growth - Semiconducting Gallium Arsenide--Growth - Semiconducting Germanium--Growth - Semiconducting Silicon--Growth;

D O I：

10.1002/sia.740120502

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present selected examples for the control of interface formation with monolayer precision during molecular beam epitaxial growth and its application to modify the bulk properties of semiconductors arbitrarily through bandgap (or wavefunction) engineering. These examples concentrate on the materials system GaAs/AlAs which is important for high-speed photonic and electron devices. In addition, as an example for strained-layer superlattice, we briefly discuss Si/SixGe1-x superlattices, where the ordering of the electronic bands is strongly affected by the built-in strain.

引用

页码：279 / 287

页数：9

共 52 条

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