NEGATIVE MAGNETORESISTANCE IN VARIABLE-RANGE-HOPPING CONDUCTION

被引：85

作者：

ZHAO, HL

SPIVAK, BZ

GELFAND, MP

FENG, SC

机构：

[1] Department of Physics, University of California, Los Angeles

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10760

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The orbital mechanism of negative magnetoresistance of variable-range-hopping conductivity is reconsidered by numerical simulations and qualitative arguments. At small magnetic fields the positive magnetic field corrections to the localization length in two-dimensional samples are universal in the sense that they are independent of the details of the scattering potential (impurity concentration, amplitude of scattering, and proximity to the metal-insulator transition). Implications of these results to transport properties on the dielectric side of the superconductor-insulator transition are discussed.

引用

页码：10760 / 10767

页数：8

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