MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNS ON A (100)-ORIENTED SI SUBSTRATE

被引：45

作者：

YOKOYAMA, M

KASHIRO, K

OHTA, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90368-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：73 / 78

页数：6

共 22 条

[1]

CHANG CY, 1973, SOLID STATE ELECT, V16, P648

[2] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L360-L362

[3] ZNS BLUE-LIGHT-EMITTING DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 5X10-4 [J].

KATAYAMA, H ;

ODA, S ;

KUKIMOTO, H .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :697-699

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J].

KITAGAWA, F ;

MISHIMA, T ;

TAKAHASHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :937-943

[5] HETEROEPITAXIAL GROWTH OF ZNS ON GAP BY THE CLOSE-SPACED TECHNIQUE [J].

KITAGAWA, M ;

SARAIE, J ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :198-203

[6] INFRARED ABSORPTION DUE TO DONOR STATES IN ZNS CRYSTALS [J].

KUKIMOTO, H ;

SHIONOYA, S ;

KODA, T ;

HIOKI, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (06) :935-&

[7]

MATSUHASHI H, 1985, JPN J APPL PHYS, V24, pL578

[8]

NIINA T, 1982, 2ND INT S MOL BEAM E, P207

[9] PREPARATION AND CHARACTERIZATION OF LOW-RESISTIVITY ZNS FOR BLUE LEDS [J].

ODA, S ;

KUKIMOTO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :956-958

[10] SURFACE-STRUCTURES AND PROPERTIES OF ZNSE GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

SALANSKY, NM .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :249-251

← 1 2 3 →