1/F NOISE IN GIANT MAGNETORESISTIVE MATERIALS

被引：19

作者：

HARDNER, HT ^{[1
]}

PARKIN, SSP ^{[1
]}

WEISSMAN, MB ^{[1
]}

SALAMON, MB ^{[1
]}

KITA, E ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.356938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The main source of 1/f resistance noise in materials exhibiting giant magnetoresistance (GMR) is the GMR effect itself. Large 1/f noise from fluctuations in the parallel vs antiparallel alignment appears when \dR/dH\ is large. We have studied this noise as a function of the number of Co/Cu bilayers in multilayer samples and discuss the implications for devices. Barkhausen noise in the resistance as the field is swept through the GMR transition is used to estimate coherent domain sizes between 0.1 and 10 mum2 for a single Co layer in the multilayers. GMR noise is also seen in a Co/Ag granular system.

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页码：6531 / 6533

页数：3

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