DEGRADATION MODE IN SEMICONDUCTOR OPTICAL MODULATORS

被引：4

作者：

YUDA, M

FUKUDA, M

MIYAZAWA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa Pref, 243-01, 3-1, Morinosato Wakamiya

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 20期

关键词：

OPTICAL MODULATION; LIGHT INTERFEROMETERS; RELIABILITY;

D O I：

10.1049/el:19951227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A degradation mode in Mach-Zehnder semiconductor optical modulators with InGaAs/InAlAs MQWs is investigated. The main accelerating factors are the input optical power and the applied voltage in high stress tests. The main cause of degradation is found to be the destruction of the p-n junction on the side wall of the ridge waveguide. The time to failure is consequently expected to be >10(5)h under practical operating conditions in optical fibre transmission systems.

引用

页码：1778 / 1779

页数：2

共 8 条

[1] 20 GBIT/S OPERATION OF A HIGH-EFFICIENCY INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH 1.2-V DRIVE VOLTAGE [J].