DYNAMICAL CONDUCTIVITY OF ELECTRONS IN SEMICONDUCTORS ASSUMING SCATTERING BY DISLOCATIONS

被引：16

作者：

GERLACH, E ^{[1
]}

RAUTENBERG, M ^{[1
]}

机构：

[1] RHEINISCH WESTFAL TH,PHYS INST 1,AACHEN,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1975年 / 67卷 / 02期

关键词：

D O I：

10.1002/pssb.2220670213

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：519 / 524

页数：6

共 6 条

[1] DOUKHAN JC, 1974, PHYS STATUS SOLIDI B, V64, P237, DOI 10.1002/pssb.2220640128
[2] MOBILITY OF HOLES IN DEFORMED SEMICONDUCTORS
DUSTER, F
LABUSCH, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (01): : 161 - 168
[3] NEW METHOD FOR CALCULATING IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS
GERLACH, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (02): : K97 - K100
[4] SCATTERING OF ELECTRONS IN SEMICONDUCTORS BY A CHARGED DISLOCATION
GERLACH, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 62 (01): : K43 - K45
[5] DYNAMICAL CONDUCTIVITY FOR IONIZED IMPURITY SCATTERING
GERLACH, E
RAUTENBERG, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 65 (01): : K13 - K17
[6] ELECTRON MOBILITY IN PLASTICALLY DEFORMED GERMANIUM
PODOR, B
[J]. PHYSICA STATUS SOLIDI, 1966, 16 (02): : K167 - &