EXCESS (1/F) NOISE IN HG0.7CD0.3TE P-N-JUNCTIONS

被引：25

作者：

BAJAJ, J

WILLIAMS, GM

SHENG, NH

HINNRICHS, M

CHEUNG, DT

RODE, JP

TENNANT, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573198

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：192 / 194

页数：3

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[4] ON 1/F NOISE AND DETECTIVITY IN REVERSE-BIASED PARA NORMAL-JUNCTION PHOTO-DIODES [J].

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[5] 1-F NOISE IN (HG,CD)TE PHOTO-DIODES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :43-48

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