HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF SIPOS PROCESS

被引：96

作者：

MATSUSHITA, T ^{[1
]}

AOKI, T ^{[1
]}

OHTSU, T ^{[1
]}

YAMOTO, H ^{[1
]}

HAYASHI, H ^{[1
]}

OKAYAMA, M ^{[1
]}

KAWANA, Y ^{[1
]}

机构：

[1] SONY CORP,ATSUGI PLANT,ATSUGI 243,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1976.18494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：826 / 830

页数：5

共 11 条

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