SEMIEMPIRICAL CONSTRUCTION OF LCAO PARAMETERS FOR II-VI COMPOUND SEMICONDUCTORS

被引：7

作者：

LI, Y ^{[1
]}

LINCHUNG, PJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 153卷 / 01期

关键词：

D O I：

10.1002/pssb.2221530122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：215 / 223

页数：9

共 21 条

[11] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

POLLAK, RA ;

MCFEELY, FR ;

KOWALCZY.SP ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :600-621

[12] UNIVERSAL LCAO PARAMETERS FOR III-V COMPOUND SEMICONDUCTORS [J].

LI, Y ;

LINCHUNG, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (02) :241-247

[13] NEW SEMIEMPIRICAL CONSTRUCTION OF THE SLATER-KOSTER PARAMETERS FOR GROUP-IV SEMICONDUCTORS [J].

LI, Y ;

LINCHUNG, PJ .

PHYSICAL REVIEW B, 1983, 27 (06) :3465-3470

[14]

Lin-Chung P. J., 1985, Thirteenth International Conference on Defects in Semiconductors, P1071

[15]

Lin-Chung P. J., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P105

[16] SIMPLIFIED LCAO METHOD FOR THE PERIODIC POTENTIAL PROBLEM [J].

SLATER, JC ;

KOSTER, GF .

PHYSICAL REVIEW, 1954, 94 (06) :1498-1524

[17]

STUCKEL DJ, 1969, PHYS REV, V179, P740

[18] STUDY OF IDEAL VACANCIES IN CDS AND CDSE IN THE WURTZITE STRUCTURE [J].

TCHAKPELE, K ;

ALBERT, JP ;

GOUT, C .

PHYSICA B & C, 1983, 117 (MAR) :200-202

[19]

VANDERREST J, 1984, J PHYS C SOLID STATE, V17, P85, DOI 10.1088/0022-3719/17/1/015

[20]

WANG CS, 1981, PHYS REV B, V24, P2293

← 1 2 3 →