DIRECT OBSERVATION OF ALXGA1-XAS/GAAS SUPERLATTICES BY REM

被引：8

作者：

YAMAMOTO, N ^{[1
]}

MUTO, S ^{[1
]}

机构：

[1] FUJITSU LTD,ATSUGI 24310,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期

关键词：

MICROSCOPES; ELECTRON - Applications - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1143/JJAP.23.L806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cleavage surface of Al//xGa//1// minus //xAs/GaAs superlattices were observed by reflection electron microscopy using a conventional transmission electron microscopy, and cross sections of the superlattices were clearly shown as stripe patterns. Strain fields around the superlattice were revealed in a REM image. The irregularities in superlattice layers caused by roughness of a substrate surface were found to be relaxed in successive layers.

引用

页码：L806 / L808

页数：3

共 6 条

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