STUDIES OF PLASMA-ETCHING OF III-V COMPOUNDS - THE EFFECTS OF TEMPERATURE AND DISCHARGE FREQUENCY

被引:2
作者
IBBOTSON, DE
FLAMM, DL
DONNELLY, VM
DUNCAN, BS
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词
D O I
10.1116/1.571343
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:489 / 490
页数:2
相关论文
共 3 条
[1]  
BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[2]   PLASMA SEPARATION OF INGAASP-INP LIGHT-EMITTING-DIODES [J].
BURTON, RH ;
TEMKIN, H ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :411-412
[3]   REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2 [J].
HU, EL ;
HOWARD, RE .
APPLIED PHYSICS LETTERS, 1980, 37 (11) :1022-1024