DETERMINATION OF FERMI-LEVEL EFFECT ON SI-SITE DISTRIBUTION IN GAAS-SI

被引:26
作者
KUNG, JK
SPITZER, WG
机构
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
关键词
D O I
10.1063/1.1663572
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2254 / 2257
页数:4
相关论文
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[12]   SITE TRANSFER OF SI IN GAAS [J].
SPITZER, WG ;
ALLRED, W .
APPLIED PHYSICS LETTERS, 1968, 12 (01) :5-&
[13]  
WHELAN JM, 1960, P INT C SEMICONDUCTO, P943
[14]  
WILLARDSON RK, 1966, P INT S, P35