HYDROGEN INCORPORATION IN GAN, ALN, AND INN DURING CL-2/CH4/H-2/AR ECR PLASMA-ETCHING

被引：20

作者：

PEARTON, SJ

ABERNATHY, CR

VARTULI, CB

MACKENZIE, JD

SHUL, RJ

WILSON, RG

ZAVADA, JM

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] HUGHES RES LABS,MALIBU,CA 90265

[3] USA,RES OFF,RES TRIANGLE PK,NC 27709

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

REACTIVE ION ETCHING; PASSIVATION;

D O I：

10.1049/el:19950558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen concentrations up to similar to 10(20)cm(-3) in GaN and AIN and similar to 10(19)cm(-3) in InN are found to be incorporated during ECR plasma etching in Cl-2/CH4/H2Ar at 170 degrees C. Even very short duration (40s) etch treatments produce hydrogen incorporation depths greater than or equal to 0.2 mu m ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450-500 degrees C restores the initial conductivity.

引用

页码：836 / 837

页数：2

共 9 条

[1] GROWTH OF III-V MATERIALS BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].