PHOTOCONDUCTOR-X GAMMA-RAY DETECTORS AND X-RAY BOLOMETERS

被引：3

作者：

WANG, CL

ECKELS, JD

MORGAN, WV

POCHA, MD

SLAUGHTER, DR

DAVIS, BA

KANIA, DR

WAGNER, RS

机构：

[1] UNIV CALIF LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

[2] EG&G,LAS VEGAS,NV 89101

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1986年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.1138724

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：2182 / 2183

页数：2

共 8 条

[1] HIGH-SPEED X-RAY SENSITIVE PHOTOCONDUCTING DETECTOR [J].

AUSTON, DH ;

FREEMAN, RR ;

SMITH, PR ;

MILLS, DM ;

SIEMANN, RH .

APPLIED PHYSICS LETTERS, 1983, 42 (12) :1050-1052

[2] HIGH-SPEED ULTRAVIOLET AND X-RAY-SENSITIVE INP PHOTOCONDUCTIVE DETECTORS [J].

DEUTSCH, TF ;

LEONBERGER, FJ ;

FOYT, AG ;

MILLS, D .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :403-405

[3]

Hammond R. B., 1981, International Electron Devices Meeting, P157

[4]

HOFSTADTER R, 1949, NUCLEONICS, V4, P2

[5]

HOFSTADTER R, 1949, NUCLEONICS, V4, P29

[6] PULSED SOFT-X-RAY RESPONSE OF INP-FE PHOTOCONDUCTORS [J].

KANIA, DR ;

BARTLETT, RJ ;

WAGNER, RS ;

HAMMOND, RB ;

PIANETTA, P .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1059-1061

[7]

Lee C. H., 1984, PICOSECOND OPTOELECT

[8] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

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