PULSE-MODULATED ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FILMS

被引：25

作者：

HATTA, A ^{[1
]}

KADOTA, K ^{[1
]}

MORI, Y ^{[1
]}

ITO, T ^{[1
]}

SASAKI, T ^{[1
]}

HIRAKI, A ^{[1
]}

OKADA, S ^{[1
]}

机构：

[1] SHIMADZU CO LTD,DIV AIRCRAFT EQUIPMENT,KYOTO 604,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulse operation of electron cyclotron resonance plasma was performed for the fabrication of diamond films by chemical vapor deposition. With square wave amplitude modulation of microwaves at 500 Hz in frequency, the growth rate became twice as large as one of continuous operation with the same microwave power. Time resolved measurement of the optical emission from the pulse modulated plasma was also carried out. © 1995 American Institute of Physics.

引用

页码：1602 / 1604

页数：3

共 25 条

[1]

BARNES BT, 1952, PHYS REV, V86, P352

[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J].