ELECTRON IRRADIATION OF P-TYPE GERMANIUM AT 4.2 DEGREES K

被引：19

作者：

WHITEHOUSE, JE

机构：

来源：

PHYSICAL REVIEW | 1966年 / 143卷 / 02期

关键词：

D O I：

10.1103/PhysRev.143.520

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：520 / +

页数：1

共 10 条

[1] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].

BROWN, WL ;

AUGUSTYNIAK, WM ;

WAITE, TR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1258-1268

[2]

CALLCOTT TA, 1961, THESIS PURDUE U

[3]

FLANAGAN TM, PRIVATE COMMUNICATIO

[4] ALPHA-PARTICLE IRRADIATION OF GE AT 4.2-DEGREES-K [J].

GOBELI, GW .

PHYSICAL REVIEW, 1958, 112 (03) :732-739

[5]

KLONTZ EE, 1963, J PHYS SOC JAPAN S3, V18, P216

[6] LOW-TEMPERATURE ANNEALING STUDIES IN GE [J].

MACKAY, JW ;

KLONTZ, EE .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1269-1274

[7]

MACKAY JW, 1963, RADIAT DAMAGE SOLIDS, V3, P27

[8]

VOOK FL, 1965, PHYS REV, V138, P1234

[9] TEMPERATURE-DEPENDENT DEFECT PRODUCTION IN BOMBARDMENT OF SEMICONDUCTORS [J].

WERTHEIM, GK .

PHYSICAL REVIEW, 1959, 115 (03) :568-569

[10] ECONOMICAL LIQUID HELIUM CRYOSTAT AND OTHER CRYOGENIC APPARATUS [J].

WHITEHOU.JE ;

CALLCOTT, TA ;

NABER, JA ;

RABY, JS .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (06) :768-&

← 1 →