DIFFUSION OF ZN ACCEPTORS DURING MOVPE OF INP

被引：32

作者：

GLADE, M ^{[1
]}

HERGETH, J ^{[1
]}

GRUTZMACHER, D ^{[1
]}

MASSELI, K ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] GESAMTHSCH KASSEL,W-3500 KASSEL,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(91)90221-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The unitentional diffusion of Zn acceptors was investigated during low pressure metalorganic vapour phase epitaxy (MOVPE) of InP at 550 and 640-degrees-C using trimethylindium (TMIn), phosphine (PH3) and diethylzinc (DEZ) as precursors. Comparison of hole concentrations obtained with a polaron etch profiler with Zn profiles obtained by secondary ion mass spectroscopy (SIMS) indicate a low level of compensation, i.e. a small ratio of interstitials to substitutionals. The data fit a model where diffusion takes place via Zn interstitials. The small concentration of these interstitials in samples doped during growth explains the lower (by 2 to 3 orders of magnitude) diffusion constant compared to that observed during intentional doping by indiffusion.

引用

页码：449 / 454

页数：6

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