ZINC DOPING IN INP GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

Doping experiments with zinc (Zn) in metalorganic vapor phase epitaxial (MOVPE) indium phosphide (InP) layers have been performed in the carrier concentration range 1 × 1017 < p < 2 × 1018 cm-3, using both DMZ and DEZ as p-doping sources. 0 The results of this study show that: (a) no memory effect and no diffusion of the Zn atoms into the substrate are detectable up to Zn concentrations of 2 × 1018 cm-3 (this is the saturation value of the active Zn atoms in InP); (b) diffusion is very strong at higher tot al Zn concentrations, because of Zn incorporation at interstitial sites. These results have been confirmed by growing doping superlattices with periods as short as 10 nm with doping concentrations of 1 × 1018 cm-3 and abrupt doping profiles as proven by secondary ion mass spectrometry (SIMS). © 1990.