CADMIUM DOPING OF INP GROWN BY MOCVD

被引：18

作者：

BLAAUW, C

EMMERSTORFER, B

SPRINGTHORPE, AJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90273-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：431 / 435

页数：5

共 9 条

[1] EPITAXIAL-GROWTH OF CD-DOPED INP FROM THE VAPOR [J].

CHEVRIER, J ;

HORACHE, E ;

GOLDSTEIN, L ;

LINH, NT .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3247-3251

[2]

CZERNIAK MR, 1984, J CRYST GROWTH, V68, P128, DOI 10.1016/0022-0248(84)90407-X

[3] DOPING STUDIES FOR INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HSU, CC ;

YUAN, JS ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :535-542

[4] A STUDY OF P-TYPE DOPANTS FOR INP GROWN BY ADDUCT MOVPE [J].

NELSON, AW ;

WESTBROOK, LD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :102-110

[5]

PUETZ N, 1987, 1ST EUR WORKSH MOVPE

[6] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :76-82

[7] THE ROLE OF IMPURITIES IN III/V SEMICONDUCTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (01) :91-100

[8] GAS-PHASE DEPLETION AND FLOW DYNAMICS IN HORIZONTAL MOCVD REACTORS [J].

VANDEVEN, J ;

RUTTEN, GMJ ;

RAAIJMAKERS, MJ ;

GILING, LJ .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :352-372

[9]

1986, CRC HDB CHEM PHYSICS

← 1 →