VACUUM GROWTH OF THIN-FILMS OF ZNSNP2

A vacuum growth technique was employed to grow thin films of the ternary chalcopyrite semiconductor ZnSnP//2. Near-stoichiometric layers were grown on GaAs, quartz and molybdenum substrates. The quality of layers grown on GaAs substrates was superior to that of layers grown on quartz substrates. All the films examined were of p-type conductivity. Indium was used to form an ohmic contact to the grown films. The more conductive samples on semi-insulating GaAs had dark resistivity values at room temperature in the range 0. 2 - 10 OMEGA cm. Only a small decrease in these resistivity values was observed at 77 K. The Hall measurements on the above samples showed carrier concentrations in the range (1 - 10) multiplied by 10**1**7 cm** minus **3 at room temperature and carrier mobility values in the range 35-47 cm**2 V** minus **1 s** minus **1. Heterostructure diodes fabricated from the grown films on n-type GaAs showed a small photoresponse, demonstrating the feasibility of photovoltaic applications of the grown material.